Abstract
In this paper, 795 nm vertical cavity surface emitting lasers (VCSELs) with close and open isolation trench structures have been designed and produced. An Al2O3 aperture with a diameter of 4 µm was formed by oxidizing the AlAs layer to confine the current and lateral optical mode. The characteristics of the VCSEL based on Al0.07Ga0.93As/Al0.35Ga0.65As multiple quantum wells (MQWs) under continuous wave operation show that the VCSEL with close isolation trench structure has a threshold current of about 1.5 mA and a maximum optical output power of 0.35 mW, and it exhibits a single mode operation below 3.5 mA. However, the VCSEL with an open isolation trench structure shows a much larger threshold current of 6 mA due to a current leakage through the connecting and surrounding area and more high order modes will be incurred by increasing the driving current. The simplification of the fabrication process of the VCSELs with open isolation trenches is obtained at the cost of poor performance. By introducing strain in the MQWs, the Al0.15Ga0.75In0.1As/Al0.4Ga0.6As MQWs based VCSEL with close isolation trench structure exhibits a threshold current as low as 0.42 mA.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Caliman, A., Sirbu, A., Iakovlev, V., Mereuta, A., Wolf, P., Bimberg, D., Kapon, E.: > 25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs. In: 2016 Optical Fiber Communications Conference and Exhibition (OFC), pp. 1–3 (2016)
Degen, C., Fischer, I., Elsäßer, W.: Transverse modes in oxide confined VCSELs: influence of pump profile, spatial hole burning, and thermal effects. Opt. Express 5, 38–47 (1999)
Derebezov, I.A., Haisler, V.A., Bakarov, A.K., Kalagin, A.K., Toropov, A.I., Kachanova, M.M., Gavrilova, T.A., Semenova, O.I., Tretyakov, D.B., Beterov, I.I., Entin, V.M., Ryabtsev, I.I.: Single-mode vertical-cavity surface emitting lasers for 87Rb based chip scale atomic clock. Semiconductors 44, 1422–1426 (2010)
Derry, P.L., Fu, R.J., Hong, C.S., Chan, E.Y., Figueroa, L.: Analysis of the high temperature characteristics of InGaAs–AlGaAs strained quantum-well lasers. IEEE J. Quantum Electron. 28, 2698–2705 (1992)
Huffaker, D.L., Graham, L.A., Deppe, G.: Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity. Electron. Lett. 33, 1225–1226 (1997)
Lear, K.L., Choquette, K.D., Schneider, R.P., Kilcoyne, S.P., Geib, K.M.: Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency. Electron. Lett. 31, 208–209 (1995)
Liu, M., Wang, C.Y., Feng, M., Holonyak, N.: 850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °C. In: 2016 Conference on Lasers and Electro-optics (CLEO), pp. 1–2 (2016)
Malacarne, A., Sorianello, V., Daly, A., Kögel, B., Ortsiefer, M., Neumeyr, C., Romagnoli, M., Bogoni, A.: Performance analysis of 40-Gb/s transmission based on directly modulated high-speed 1530-nm VCSEL. IEEE Photon. Technol. Lett. 28, 1735–1738 (2016)
Mitani, S.M., Choudhury, P.K., Alias, M.S.: On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser. Optik 119, 373–378 (2008)
Serkland, D.K., Geib, K.M., Peake, G.M., Lutwak, R., Rashed, A., Varghese, M., Tepolt, G., Prouty, M.: VCSELs for atomic sensors. In: Proceedings on SPIE, vol. 6484, pp. 648406-1–648406-10 (2007)
Shchukin, V., Ledentsov, N.N., Kropp, J., Steinle, G., Ledentsov, N., Burger, S., Schmidt, F.: Single-mode vertical cavity surface emitting laser via oxide-aperture-engineering of leakage of high-order transverse modes. IEEE J. Quantum Electron. 50, 990–995 (2014)
Strzelecka, E.M., Morgan, R.A., Liu, Y., Walterson, B., Skogen, J., Kalweit, E., Bounak, S., Chanhvongsak, H., Marta, T., Skogman, D., Nohava, J., Gieske, J., Lehman, J.A., Hibbs-Brenner, M.K.: VCSEL-based modules for optical interconnects. In: Proceedings on SPIE, vol. 3627, pp. 2–13 (1999)
Van Hoe, B., Lee, G., Bosman, E., Missinne, J., Kalathimekkad, S., Maskery, O., Webb, D.J., Sugden, K., Van Daele, P., Van Steenberge, G.: Ultra small integrated optical fiber sensing system. Sensors 12, 12052–12069 (2012)
Watkins, L.S., Ghosh, C., Seurin, J.F., Zhou, D., Xu, G., Xu, B., Miglo, A.: High power VCSEL devices for atomic clock applications. In: Proceedings on SPIE, vol. 9616, pp. 96160J-1–96160J-11 (2015)
Wei, L., Danny, E., Vladimir, I., Anatoliy, S., Andrey, M., Lute, M.: All-optical micro-clock. In: Frequency Control Symposium (FCS). IEEE International, pp. 1–4 (2014)
Yoshikawa, M., Murakami, A., Sakurai, J., Nakayama, H., Nakamura, T.: High power VCSEL devices for free space optical communications. In: Electronic Components and Technology Conference, Proceedings, 55th, vol. 2, pp. 1353–1358 (2005)
Zhang, J., Ning, Y.-Q., Zhang, J.-W., Zhang, X., Zeng, Y.-G., Wang, L.-J.: 795 nm VCSELs for 87Rb based miniaturized atomic clock. Opt. Precis Eng. 22, 50–57 (2014)
Acknowledgements
This work is financially supported by the National Natural Science Foundation of China under Contract No. 61376065.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Sun, Y.R., Dong, J.R., Zhao, Y.M. et al. The fabrication and lasing characteristics of oxide-confined 795 nm VCSELs with close and open isolation trenches. Opt Quant Electron 49, 361 (2017). https://doi.org/10.1007/s11082-017-1186-1
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-017-1186-1